dta015t series pnp -100ma -50v digital transistors (bias resistor built-in transistors) datasheet ll outline parameter value vmt3 emt3f v ceo -50v i c -100ma r 1 100k DTA015TM dta015teb (sc-105aa) (sc-89) umt3f ll features 1) built-in biasing resistor 2) built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) the bias resistors consist of thin-film resistor s with complete isolation to allow negative biasing of the input. they also have the advantage of completely eliminating parasitic effects. 4) only the on/off conditions need to be set for operation, making the circuit design easy. 5) complementary npn types: dtc015t series 6) lead free/rohs compliant. dta015tub (sc-85) ll inner circuit ll application b: base switching circuit, inverter circuit, interface circ uit, c: collector driver circuit e: emitter ll packaging specifications part no. package package size taping code reel size (mm) tape width (mm) basic ordering unit.(pcs) marking DTA015TM vmt3 1212 t2l 180 8 8000 51 dta015teb emt3f 1616 tl 180 8 3000 51 dta015tub umt3f 2021 tl 180 8 3000 51 www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 1/6 20121023 - rev.001 downloaded from: http:///
dta015t series d atasheet ll absolute maximum ratings (t a = 25c) parameter symbol values unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -100 ma power dissipation DTA015TM p d *1 150 mw dta015teb 150 dta015tub 200 junction temperature t j 150 range of storage temperature t stg -55 to +150 ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. collector-base breakdown voltage bv cbo i c = -50a -50 - - v collector-emitter breakdown voltage bv ceo i c = -1ma -50 - - v emitter-base breakdown voltage bv ebo i e = -50a -5 - - v collector cut-off current i cbo v cb = -50v - - -0.5 a emitter cut-off current i ebo v eb = -4v - - -0.5 a collector-emitter saturation voltage v ce(sat) i c / i b = -5ma / -0.25ma - -0.05 -0.25 v dc current gain h fe v ce = -10v, i c = -5ma 100 - 600 - input resistance r 1 - 70 100 130 k transition frequency f t *2 v ce = -10v, i e = 5ma, f = 100mhz - 250 - mhz *1 each terminal mounted on a reference footprint *2 characteristics of built-in transistor www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 2/6 20121023 - rev.001 downloaded from: http:///
dta015t series datasheet ll electrical characteristic curves (t a =25c) fig.1 grounded emitter propagation characteristics f ig.2 grounded emitter output characteristics fig.3 dc current gain vs. collector current fig.4 co llector-emitter saturation voltage vs. collector current www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 3/6 20121023 - rev.001 downloaded from: http:///
dta015t series datasheet ll di mensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 4/6 20121023 - rev.001 downloaded from: http:///
dta015t series datasheet ll di mensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 5/6 20121023 - rev.001 downloaded from: http:///
dta015t series datasheet ll di mensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 6/6 20121023 - rev.001 downloaded from: http:///
downloaded from: http:///
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